Electric double-layer transistors: a review of recent progress

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

PDF] Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing - ScienceDirect

Figure 1 from Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

a) The schematic diagram of the EDL-FET device. (b) I–V curve of the

Electric Double Layer Structure

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Ambipolar Carrier Injections Governed by Electrochemical Potentials of Ionic Liquids in Electric-Double-Layer Thin-Film Transistors of Lead- and Titanyl-Phthalocyanine

Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses